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ARCHIVE INFORMATION
8
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
Figure 15. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
2000
2110
2140
4.78 - j5.19
3.81 - j3.69
4.04 - j4.14
8.15 - j5.91
7.07 - j7.32
6.28 - j7.71
VDD
= 28 Vdc, I
DQ
= 500 mA, P
out
= 10 W Avg.
Zo
= 10
Ω
Zload
f = 2000 MHz
f = 2200 MHz
Zsource
2170
2200 3.57 - j3.114.92 - j7.85
3.69 - j3.39
5.61 - j7.85
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
f = 2000 MHz
f = 2200 MHz
相关PDF资料
MRF5S21045NR1 MOSFET RF N-CH 28V 10W TO270-4
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MRF5S21130HSR5 MOSFET RF N-CHAN 28V 28W NI-880S
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MRF5S9070NR5 MOSFET RF N-CH 26V 70W TO-270-2
相关代理商/技术参数
MRF5S21045NBR1 功能描述:射频MOSFET电源晶体管 2170MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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